The characteristics of a heterojunction bipolar transistor ( HBT) depends closely on the properties of the material system and can be improved greatly by bandgap engineering. 异质结晶体三极管(HBT)的性能与其材料体系密不可分,利用能带工程可以大大优化器件的结构,提高器件性能。
The study of gainasp/ inp double heterojunction LED material GaInAsP/InP双异质结发光管材料的研究
In this paper, the design principle of heterojunction bipolar transistors ( HBTs), including energy band gap design and semiconductor material selection as well as device structure design, are discussed in more detail. 本文较详细地讨论了异质结晶体管的设计原理、材料选用和结构设计。
Study on Heterojunction Material by AES/ XPS 用AES/XPS对异质结材料的研究
A thin base ( 8nm) InGaP/ GaAs dual heterojunction material is grown by MBE and a heterojunction bipolar transistor ( HBT) with negative differential resistance ( NDR) is fabricated. 采用MBE方法生长了8nm基区的InGaP/GaAs双异质结材料,研制成具有负阻特性的异质结晶体管。
Heterojunction model can explain successfully for existence of interfacial barrier between the surface of P type GaAs semiconductor material and ( Cs, O) activation layer, but the heterojunction with bulk characteristic is not consistent in thickness of ( Cs, O) activation layer. 异质结模型可以成功解释P型GaAs和(Cs,O)激活层之间界面势垒的存在,但这种具有体效应的异质结无法与(Cs,O)层的厚度相统一;